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ARF360S33 датащи(PDF) 2 Page - Power Semiconductors |
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ARF360S33 датащи(HTML) 2 Page - Power Semiconductors |
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2 / 2 page ![]() ARF360 FAST RECOVERY DIODE FINAL SPECIFICATION mar 03 - ISSUE : 4 Distributed by FORWARD CHARACTERISTIC Tj = 125 °C 0 100 200 300 400 500 600 700 800 900 1000 1357 Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 0.001 0.01 0.1 1 10 100 t[s] SURGE CHARACTERISTIC Tj = 125 °C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 10 100 n° cycles All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO |
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