IRLL2705PBF datasheet(2/9 Pages) IRF

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IRLL2705PbF

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Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.061

V/°C Reference to 25°C, ID = 1mA

0.040

VGS = 10V, ID = 3.8A

0.051

Ω

VGS = 5.0V, ID = 3.8A

0.065

VGS = 4.0V, ID = 1.9A

VGS(th)

Gate Threshold Voltage

1.0

2.0

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

5.1

VDS = 25V, ID = 1.9A

VDS = 55V, VGS = 0V

250

VDS = 44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

100

VGS = 16V

Gate-to-Source Reverse Leakage

-100

VGS = -16V

Total Gate Charge

ID = 3.8A

Qgs

Gate-to-Source Charge

3.5

5.3

VDS = 44V

Qgd

Gate-to-Drain ("Miller") Charge

9.7

VGS = 10V, See Fig. 6 and 9

td(on)

Turn-On Delay Time

6.2

VDD = 28V

Rise Time

ID = 3.8A

td(off)

Turn-Off Delay Time

RG = 6.2Ω

Fall Time

RD = 7.1Ω, See Fig. 10

Ciss

Input Capacitance

870

VGS = 0V

Coss

Output Capacitance

220

VDS = 25V

Crss

Reverse Transfer Capacitance

= 1.0MHz, See Fig. 5

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

IGSS

RDS(on)

Static Drain-to-Source On-Resistance

IDSS

Drain-to-Source Leakage Current

µA

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode)

p-n junction diode.

VSD

Diode Forward Voltage

1.3

TJ = 25°C, IS = 3.8A, VGS = 0V

trr

Reverse Recovery Time

TJ = 25°C, IF = 3.8A

Qrr

Reverse RecoveryCharge

140 210

di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Source-Drain Ratings and Characteristics

0.91

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

SD ≤ 3.8A, di/dt ≤ 220A/µs, V

DD ≤ V(BR)DSS,

TJ ≤ 150°C

Notes:

VDD = 25V, starting TJ = 25°C, L = 15mH

RG = 25Ω, IAS = 3.8A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

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