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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRLR014NPBF датащи(PDF) 2 Page - International Rectifier |
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IRLR014NPBF датащи(HTML) 2 Page - International Rectifier |
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2 / 11 page  IRLR/U014NPbF 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 6A, VGS = 0V trr Reverse Recovery Time ––– 37 56 nS TJ = 25°C, IF = 6A Qrr Reverse RecoveryCharge ––– 48 71 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 10 40 A Starting TJ = 25°C, L = 1.96mH RG = 25Ω, IAS = 6A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width ≤ 300µs; duty cycle ≤ 2%.
This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact ISD ≤ 6.0A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.14 VGS = 10V, ID = 6A ––– ––– 0.21 VGS = 4.5V, ID = 5A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 3.1 ––– ––– S VDS = 25V, ID = 6A ––– ––– 25 µA VDS = 55V, VGS = 0V ––– ––– 250 VDS = 55V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 7.9 ID = 6A Qgs Gate-to-Source Charge ––– ––– 1.4 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 4.4 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 6.5 ––– VDD = 28V tr Rise Time ––– 47 ––– ns ID = 6A td(off) Turn-Off Delay Time ––– 12 ––– RG = 6.2Ω, VGS = 5.0V tf Fall Time ––– 23 ––– RD = 4.5Ω, See Fig. 10 Between lead, 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 265 ––– VGS = 0V Coss Output Capacitance ––– 80 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 38 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 7.5 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance ––– 4.5 ––– IDSS Drain-to-Source Leakage Current Ω |
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