ADM3416 datasheet(2/4 Pages) ADV

номер детали	ADM3416

подробное описание детали	N-Channel Enhancement Mode Field Effect Transistor

PDF	4 Pages

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производитель	ADV [Advanced (Shenzhen) Electronics Co.,Ltd]

домашняя страница	http://www.advsemi.com/en/

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ADM3416

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www.advsemi.com

Feb,2014 -Rev.1.01

ADV

Electrical Characteristics (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

On/off

Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=250uA

IDSS

Zero Gate Voltage Drain Current

VDS= 20V, VGS=0V

VDS=20V, VGS=0V TJ=55°C

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=250uA

0.4

1.0

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

RDS(ON)

Drain-SourceOn-stateResistance⑵

VGS= 4.5V, IDS=6A



VGS= 2.5V, IDS=4A

Dynamic Characteristics

Ciss

Input Capacitance

VGS=0V,

VDS= 10V,

Frequency=1.0MHz

980

Coss

Output Capacitance

225

Crss

Reverse Transfer Capacitance

120

Switching Characteristics

td(ON)

Turn-on Delay Time⑴

VDD=10V,

ID= 4A, VGS=4.5V,

RGEN=3Ω, RL=1.5Ω

1.2

Turn-on Rise Time⑴

2.4

td(OFF)

Turn-off Delay Time⑴

Turn-off Fall Time⑴

Total Gate Charge⑴

VDS=10V, VGS= 4.5V,

IDS=6A

Qgs

Gate-Source Charge⑴

Qgd

Gate-Drain Charge⑴

Diode Characteristics

VSD

Diode Forward Voltage⑵

ISD = 6A, VGS = 0

0.8

1.2

NOTES:

Independent of operating temperature.

Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

Surface Mounted on FR4 Board, t < 10 sec.

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