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AUG-19-2004
Dual N-Channel Enhancement Mode
Field Effect Transistor
P2804HVG
SOP-8
Lead-Free
NIKO-SEM
On-State Drain Current
1
ID(ON)
VDS = 5V, VGS = 10V
20
A
VGS = 4.5V, ID = 6A
30
42
Drain-Source On-State
Resistance
1
RDS(ON)
VGS = 10V, ID = 7A
21
28
mΩ
Forward Transconductance
1
gfs
VDS = 10V, ID = 5A
24
S
DYNAMIC
Input Capacitance
Ciss
790
Output Capacitance
Coss
175
Reverse Transfer Capacitance
Crss
VGS = 0V, VDS = 10V, f = 1MHz
65
pF
Total Gate Charge
2
Qg
16
Gate-Source Charge
2
Qgs
2.5
Gate-Drain Charge
2
Qgd
VDS = 0.5V(BR)DSS, VGS = 5V,
ID = 7A
2.1
nC
Turn-On Delay Time
2
td(on)
2.2
4.4
Rise Time
2
tr
VDS = 20V
7.5
15
Turn-Off Delay Time
2
td(off)
ID ≅ 1A, VGS = 10V, RGEN = 6Ω
11.8
21.3
Fall Time
2
tf
11
20
nS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)
Continuous Current
IS
1.3
Pulsed Current
3
ISM
2.6
A
Forward Voltage
1
VSD
IF = Is, VGS = 0V
1
V
Reverse Recovery Time
trr
IF = 5A, dlF/dt = 100A / µS
15.5
nS
Reverse Recovery Charge
Qrr
7.9
1Pulse test : Pulse Width
≤ 300 µsec, Duty Cycle ≤ 2%.
2Independent of operating temperature.
3Pulse width limited by maximum junction temperature.
REMARK: THE PRODUCT MARKED WITH “P2804HVG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.
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