FEATURES

ULTRA LOW NOISE (f = 1kHz)

HIGH BREAKDOWN VOLTAGE

HIGH GAIN

HIGH INPUT IMPEDANCE

LOW CAPACITANCE

22pF max

IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170

ABSOLUTE MAXIMUM RATINGS

1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-65 to +150 °C

Operating Junction Temperature

-55 to +135 °C

Maximum Power Dissipation

Continuous Power Dissipation @ +125 °C

400mW

Maximum Currents

Gate Forward Current

Maximum Voltages

Gate to Source

Gate to Drain

ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)

SYMBOL

CHARACTERISTIC

MIN

TYP

MAX UNITS

CONDITIONS

Gate to Source Breakdown Voltage

40

V

Gate to Source Pinch-off Voltage

0.2

2

V

Gate to Source Operating Voltage

0.5

V

LSK170A

2.6

6.5

LSK170B

6

12

Drain to Source Saturation

Current

LSK170C

10

20

mA

Gate Operating Current

0.5

nA

Gate to Source Leakage Current

1

nA

Full Conduction Transconductance

22

mS

Typical Conduction Transconductance

10

mS

Noise Voltage

0.9

1.9

nV/√Hz

NBW = 1Hz

Noise Voltage

2.5

4

nV/√Hz

NBW = 1Hz

Common Source Input Capacitance

20

pF

Common Source Reverse Transfer Cap.

5

pF

LSK170

ULTRA LOW NOISE

SINGLE N-CHANNEL JFET

Linear Integrated Systems

1.

Absolute maximum ratings are limiting values above which serviceability may be impaired.

Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other

rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.

*For equivalent monolithic dual, see LSK389 family.

TO-92

BOTTOM VIEW

123

DG S

1

2

3

SOT-23

TOP VIEW

D

G

S