AMMC-5026 datasheet(2/8 Pages) AVAGO

2 / 8 page

AMMC-5026 DC Specifications/Physical Properties[1]

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

dss

Saturated Drain Current (V

dd=7 V, Vg1 =0 V, Vg2 =open circuit)

250

350

450

First Gate Pinch-off Voltage (V

dd=7 V, Idd= 0.1 Idss, Vg2 = open circuit)

-1.2

Vg2

Second Gate Self-bias Voltage (Vdd=7 V, Idd=150 mA, Vg2=open circuit)

3.5

Idsoff

First Gate Pinch-off Current

(Vg1)(Vdd=7 V, Vg1=3.5 V, Vg2=open circuit)

ch-b

Thermal Resistance[2] (Backside temperature, Tb = 25°C)

°C/W

Notes:

1. Backside temperature Tb = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (

ch-b) = 38°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance at

backside temperature (T

b) = 25°C calculated from measured data.

RF Specifications[3,4] (V

dd = 7V, Idd (Q) = 150 mA, Z

in = Z0 = 50Ω)

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

21|

Small-signal Gain

8.5

10.5

12.5

∆|S

21|

Small-signal Gain Flatness

±0.75

±1.5

RLin

Input Return Loss

RLout

Output Return Loss

12|

Isolation

-1dB

Output Power @ 1 dB Gain Compression

f = 10 GHz

dBm

Psat

Saturated Output Power

f = 10 GHz

dBm

OIP3

Output 3rd Order Intercept Point,

dBm

RFin1 = RFin2 = - 20 dBm, f = 10 GHz, ∆f = 2 MHz

Noise Figure

f = 10 GHz

3.6

f = 20 GHz

4.3

Second Harmonic (Pin = 12 dBm at 10 GHz)

dBc

-20

-17.5

Third Harmonic (Pin = 12 dBm at 10 GHz)

dBc

-30

-28

Notes:

1. Data measured in wafer form, Tchuck = 25°C.

2. 100% on wafer RF test is done at frequency = 2, 10, 22, 26.5, and 35 GHz, except as noted.

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