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AMMC-6231 датащи(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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AMMC-6231 датащи(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 8 page ![]() 2 Noise Figure at 31 GHz AMMC-6231 RF Specifications [3, 4, 5] TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50 Ω Ω Ω Ω Ω Notes: 1. Ambient operational temperature TA=25°C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured data. 3. Small/Large -signal data measured in wafer form TA = 25°C. 4. 100% on-wafer RF test is done at frequency =18, 26, and 31 GHz. 5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching. 6. As derived from measured s-parameters S11 at 31GHz Noise Figure at 26 GHz Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several production lots. AMMC-6231 DC Specifications/Physical Properties [1] Symbol Parameters and Test Conditions Units Minimum Typical Maximum Sigma Gain Small-signal Gain[6] dB 20 22 0.4 NF Noise Figure into 50 Ω dB 18-28 GHz = 2.5 28-32 GHz = 2.7 18-28 GHz = 2.8 28-32 GHz = 2.9 0.1 P-1dB Output Power at 1dB Gain Compression dBm +8.5 OIP3 Third Order Intercept Point; ∆f=100MHz; Pin=-35dBm dBm +19 RLin Input Return Loss[6] dB -9 -8 0.3 RLout Output Return Loss[6] dB -16 -12 0.5 LSL 21 21.2 21.4 21.6 21.8 22 22.2 22.4 USL -10 -9 -8 USL 2.5 2.6 2.7 2.8 2.9 Symbol Parameters and Test Conditions Units Min. Typ. Max. Id Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V) mA 60 80 θ ch-b Thermal Resistance[2] (Backside temperature, Tb = 25°C) °C/W 25 |
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