AMMP-6220 datasheet(2/10 Pages) AVAGO

2 / 10 page

AMMP-6220 Absolute Maximum Ratings [1]

Symbol

Parameters/Conditions

Units

Min.

Max.

Positive Drain Voltage

Drain Current

100

CW Input Power

dBm

Tch

Operating Channel Temp.

°C

+150

Tstg

Storage Case Temp.

°C

-65

+150

Tmax

Maximum Assembly Temp.

°C

+300

(60 sec max.)

Note:

1. Operation in excess of any one of these conditions may result in permanent damage to this

device.

AMMP-6220 DC Specifications/Physical Properties [1]

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

Drain Supply Current (under any

RF power drive and temperature)

(Vd = 3.0 V)

qch-b

Thermal Resistance[2]

(Backside temperature, Tb = 25°C) °C/W

Notes:

1. Ambient operational temperature TA = 25°C unless otherwise noted.

2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared mi-

croscopy. Thermal Resistance at backside temperature (Tb) = 25°C calculated from measured

data.

AMMP-6220 RF Specifications [3, 4, 6]

TA= 25°C, Vd = 3.0 V, Id(Q) = 55 mA, Zo = 50 W

Symbol

Parameters and Test Conditions

Units

Typical

Sigma

Gain

Small-signal Gain[5]

0.5

Noise Figure into 50 W[5]

2.5

0.2

P-1dB

Output Power at 1dB Gain Compression

dBm

+10

0.8

OIP3

Third Order Intercept Point;

dBm

+20

1.1

∆f = 100 MHz; Pin = -20 dBm

RLin

Input Return Loss

-12

0.3

RLout

Output Return Loss

-16

0.7

Isol

Reverse Isolation

-45

0.5

Notes:

3. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.

4. Pre-assembly into package performance verified 100% on-wafer per AMMC-6220 published specifications.

5. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies.

6. Specifications are derived from measurements in a 50 W test environment. Aspects of the amplifier performance may be improved over a more

narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.

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