AMMP-6408 datasheet(2/12 Pages) AVAGO

2 / 12 page

Absolute Maximum Ratings[1]

Symbol

Parameters[1]

Units

Value

Notes

PositiveSupplyVoltage

note2

GateSupplyVoltage

-3to0.5

DrainCurrent

900

PowerDissipation

4.6

note2,3

CWInputPower

dBm

note2

Tch,max

MaximumOperatingChannelTemperature

°C

+55

note4,5

Tstg

StorageCaseTemperature

°C

-65to+55

Tmax

MaximumAssemblyTemp(20sec.max.)

°C

+260

Notes:

. Operationinexcessofanyoneoftheseconditionsmayresultinpermanentdamagetothisdevice.

2. Combinationsofsupplyvoltage,draincurrent,inputpower,andoutputpowershallnotexceedPD.

3. Whenoperatingatthisconditionwithabaseplatetemperatureof85°C,themediantimetofailure(MTTF)issignificantlyreduced.

4. TheseratingsapplytoeachindividualFET.

5. Junction operating temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be

maintainedatthelowestpossiblelevels.

DC Specifications/Physical Properties

Symbol

Parameters and Test Conditions

Units

Value

DrainSupplyCurrent(Vd=5V,VgsetforIdTypical)

650

GateSupplyOperatingVoltage(Id(Q)=650(mA))

Rqjc

ThermalResistance[6](Channel-to-BasePlate)

°C/W

Tch

ChannelTemperature

°C

50.6

Symbol

Parameters and Test Conditions

Units

Minimum

Typical

Maximum

Freq.

OperationalFrequency

GHz

Gain

Small-SignalGainS2[3,4]

7.5(@Freq=8GHz)

5.5(@Freq=7GHz)

P-dB

OutputPoweratdB[3]

GainCompression[2]

dBm

28(@Freq=8GHz)

27(@Freq=7GHz)

28.5

P-3dB

OutputPowerat3dBGainCompression[3]

dBm

29.5

OIP3

ThirdOrderInterceptPoint;

∆f=00MHz;Pin=-20dBm

dBm

RLin

InputReturnLoss[2]

RLout

OutputReturnLoss[2]

Isolation

ReverseIsolation

Notes:

.Small/large-signaldatameasuredinpackagedformona2.4mmconnecterbasedevaluationboardatTA=25°C.

2.Thisfinalpackagepartperformanceisverifiedbyafunctionaltestcorrelatedtoactualperformanceatoneormorefrequencies.

3.Specificationsarederivedfrommeasurementsina50Ωtestenvironment.Aspectsoftheamplifierperformancemaybeimprovedovera

narrowerbandwidthbyapplicationofadditionalconjugate,linearity,orpowermatching.

4.Preassemblyintopackageperformanceverified00%on-waferpublishedspecificationsatfrequencies=7,2,and7GHz.

RF Specifications[1,2,3,4]

TA=25°C,Vd=5V,Id(Q)=650mA,Zo=50Ω

Note:

6. AssumeSnPbsolderingtoanevaluationRFboardat80°Cbaseplatetemperatures.Worstcaseforthechanneltemperatureisunderthe

quiescentoperation.Atsaturatedoutputpower,DCpowerconsumptionrisesto4.26Wwith.4WRFpowerdeliveredtoload.Power

dissipationis3.Wandthetemperatureriseinthechannelis68.4°C.Inthiscondition,thebaseplatetemperaturemustberemainedbelow

86.6°Ctomaintainmaximumoperatingchanneltemperaturebelow55°C.

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