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STR750FV0 датащи(PDF) 50 Page - STMicroelectronics

номер детали STR750FV0
подробное описание детали  ARM7TDMI-S??32-bit MCU with Flash, SMI, 3 std 16-bit timers, PWM timer, fast 10-bit ADC, I2C, UART, SSP, USB and CAN
PDF  81 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STR750FV0 датащи(HTML) 50 Page - STMicroelectronics

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Electrical parameters
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
50/81
5.3.6
Memory characteristics
Flash memory
Subject to general operating conditions for VDD_IO and V18, TA = -40 to 105 °C unless
otherwise specified.
Table 26.
Flash memory characteristics
Symbol
Parameter
Test Conditions
Value
Unit
Typ
Max(1)
1.
Data based on characterisation not tested in production
tPW
Word Program
35
µs
tPDW
Double Word Program
60
µs
tPB0
Bank 0 Program (256K)
Single Word programming of
a checker-board pattern
24.9(2)
2.
10K program/erase cycles.
s
tPB1
Bank 1 Program (16K)
Single Word programming of
a checker-board pattern
125
224(2)
ms
tES
Sector Erase (64K)
Not preprogrammed (all 1)
Preprogrammed (all 0)
1.54
1.176
2.94(2)
2.38(2)
s
tES
Sector Erase (8K)
Not preprogrammed (all 1)
Preprogrammed (all 0)
392
343
560(2)
532(2)
ms
tES
Bank 0 Erase (256K)
Not preprogrammed (all 1)
Preprogrammed (all 0)
8.0
6.6
13.7
11.2
s
tES
Bank 1 Erase (16K)
Not preprogrammed (all 1)
Preprogrammed (all 0)
0.9
0.8
1.5
1.3
s
tRPD
Recovery when disabled
20
µs
tPSL
Program Suspend Latency
10
µs
tESL
Erase Suspend Latency
300
µs
Table 27.
Flash memory endurance and data retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Data based on characterisation not tested in production.
Typ
Max
NEND_B0 Endurance (Bank 0 sectors)
10
kcycles
NEND_B1 Endurance (Bank 1 sectors)
100
kcycles
YRET
Data Retention
TA=85° C
20
Years
tESR
Erase Suspend Rate
Min time from Erase
Resume to next Erase
Suspend
20
ms



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