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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STK003SF датащи(PDF) 2 Page - AUK corp |
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STK003SF датащи(HTML) 2 Page - AUK corp |
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2 / 8 page  KSD-T5C043-000 2 STK003SF Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±12 V Drain current (DC) ** ID 3.6 A Drain current (Pulsed) * IDP 14.4 A Total Power dissipation ** PD 0.35 W Avalanche current (Single) ② IAS 3.6 A Single pulsed avalanche energy ② EAS 14 mJ Avalanche current (Repetitive) ① IAR 4.3 A Repetitive avalanche energy ① EAR 1.3 mJ Junction temperature TJ 150 Storage temperature range Tstg -55~150 °C * Limited by maximum junction temperature ** Device mounted on a glass-epoxy board Characteristic Symbol Typ. Max Unit Thermal resistance Junction-ambient Rth(J-a) ** - 357 ℃ /W |
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