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ADL8154ACPZN-R7 датащи(PDF) 1 Page - Analog Devices

номер детали ADL8154ACPZN-R7
подробное описание детали  Low Phase Noise Amplifier, 10 MHz to 6 GHz
PDF  23 Pages
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производитель  AD [Analog Devices]
домашняя страница  http://www.analog.com
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Data Sheet
ADL8154
Low Phase Noise Amplifier, 10 MHz to 6 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Wideband operation: 10 MHz to 6 GHz
Low residual phase noise
Single positive supply: 5 V and ICQ of 125 mA
RBIAS collector current adjustment pin
Extended operating temperature range: −55°C to +125°C
RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP
APPLICATIONS
Telecommunication
Test and measurement equipment
Radars
Local oscillator drivers
GENERAL DESCRIPTION
The ADL8154 is a small form factor, low phase noise amplifier
designed for instrumentation, radar, and telecommunications appli-
cations. The phase noise from 2 GHz to 5 GHz is −172 dBc/Hz at 1
dB compression (P1dB) and 10 kHz offset.
The ADL8154 operates from a single positive supply (VCC); its bias
current (ICQ) is set by a resistor connected between the RBIAS pin
and the VCC1 and VCC2 pins. The RF input and RF output are
DC-coupled and matched to 50 Ω. A bias inductor is required on the
RF output.
The typical gain and noise figure are 16.5 dB and 3.5 dB , respec-
tively, from 2 GHz to 5 GHz. The typical output third-order intercept
(OIP3) and output second-order intercept (OIP2) are 34.5 dBm and
53 dBm, respectively, from 2 GHz to 5 GHz. The nominal supply
voltage is 5 V, and the supply current is 125 mA.
The ADL8154 is fabricated on gallium arsenide (GaAs), heterojunc-
tion bipolar transistor (HBT). The device is housed in a RoHS-com-
pliant, 2 mm × 2 mm, 8-lead LFCSP and is specified for operation
from −55°C to +125°C.
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram


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