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HS1D датащи(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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HS1D датащи(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 2 page ![]() Tj=100 C 0 Tj=25 C 0 RATINGS AND CHARACTERISTIC CURVES (HS1A THRU HS1M) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 W NONINDUCTIVE 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) PULSE GENERATOR (NOTE 2) DUT (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms (-) (+) 10 W NONINDUCTIVE -1.0A -0.25A 0 +0.5A trr 1cm SET TIME BASE FOR 5/ 10ns/ cm FIG.1- MAXIMUM AVERAGE FORWARD CURRENT DERATING 80 90 100 120 140 150 130 110 0 0.2 0.6 0.8 1.2 1.0 0.4 LEAD TEMPERATURE. ( C) O FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 1 2 5 10 20 100 50 10 15 25 20 30 35 40 NUMBER OF CYCLES AT 60Hz 8.3ms Single Half Sine Wave JEDEC Method 5 FIG.4- TYPICAL JUNCTION CAPACITANCE 0.1 0.5 1 5 2 10 20 50 100 200 500 1000 10 20 30 40 50 60 70 REVERSE VOLTAGE. (V) 0 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.2- TYPICAL REVERSE CHARACTERISTICS 20 40 60 80 100 120 0.1 1 10 100 1000 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 140 0 Version: B07 .2 .4 .6 .8 1.0 1.2 1.4 1.6 0.01 0.1 1.0 10 100 FORWARD VOLTAGE. (V) Tj=25 C 0 H S1A-H S1D 0 HS1A-HS1G HS1J-HS1M |
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