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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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03RBT6 датащи(PDF) 39 Page - STMicroelectronics |
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03RBT6 датащи(HTML) 39 Page - STMicroelectronics |
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39 / 67 page  STM32F103xx Electrical characteristics 39/67 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = −40 to 105 °C unless otherwise specified. Table 24. Flash memory endurance and data retention Table 23. Flash memory characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Values based on characterization and not tested in production. Unit tprog Word programming time TA = −40 to +105 °C 20 40 µs tERASE Page (1kB) erase time TA = −40 to +105 °C 20 40 ms tME Mass erase time TA = −40 to +105 °C 20 40 ms IDD Supply current Read mode fHCLK = 72 MHz with 2 wait states, VDD = 3.3 V 20 mA Write / Erase modes fHCLK = 72 MHz, VDD = 3.3 V 5mA Power-down mode / HALT, VDD = 3.0 to 3.6 V 50 µA Symbol Parameter Conditions Value Unit Min(1) 1. Values based on characterization not tested in production. Typ Max NEND Endurance 1 10 kcycles tRET Data retention TA = 85 °C 30 Years |
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