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MBR1045CT датащи(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

номер детали MBR1045CT
подробное описание детали  10.0 AMPS. Schottky Barrier Rectifiers
PDF  2 Pages
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производитель  TSC [Taiwan Semiconductor Company, Ltd]
домашняя страница  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

MBR1045CT датащи(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  MBR1045CT Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd MBR1045CT Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd  
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Dimensions in inches and (millimeters)
- 108 -
Version: B07
MBR1035CT - MBR10200CT
10.0 AMPS. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260
oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
Rating at 25
oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol MBR
1035
CT
MBR
1045
CT
MBR
1050
CT
MBR
1060
CT
MBR
1090
CT
MBR
10100
CT
MBR
10150
CT
MBR
10200
CT
Units
Maximum Recurrent Peak Reverse Voltage
VRRM
35
45
50
60
90
100
150
200
V
Maximum RMS Voltage
VRMS
24
31
35
42
63
70
105
140
V
Maximum DC Blocking Voltage
VDC
35
45
50
60
90
100
150
200
V
Maximum Average Forward Rectified Current
at Tc=125
OC
I(AV)
10
A
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125
oC
IFRM
32
A
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method )
IFSM
120
A
Peak Repetitive Reverse Surge Current (Note 1)
IRRM
1.0
0.5
A
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=5A, TC=25
oC
IF=5A, TC=125
oC
IF=10A, TC=25
oC
IF=10A, TC=125
oC
VF
0.70
0.57
0.80
0.67
0.80
0.65
0.90
0.75
0.85
0.75
0.95
0.85
0.88
0.78
0.98
0.88
V
0.1
Maximum Instantaneous Reverse Current
@ Tc =25
oC at Rated DC Blocking Voltage
@ Tc=125
oC
(Note 2)
IR
15
10
2.0
mA
mA
Voltage Rate of Change (Rated VR)
dV/dt
10,000
V/uS
Maximum Typical Thermal Resistance (Note 3)
RθJC
1.5
oC/W
Operating Junction Temperature Range
TJ
-65 to +150
oC
Storage Temperature Range
TSTG
-65 to +175
oC
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.


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