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ADS55A160HT датащи(PDF) 3 Page - Advanced (Shenzhen) Electronics Co.,Ltd

номер детали ADS55A160HT
подробное описание детали  SCRs
PDF  6 Pages
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производитель  ADV [Advanced (Shenzhen) Electronics Co.,Ltd]
домашняя страница  http://www.advsemi.com/en/
Logo ADV - Advanced (Shenzhen) Electronics Co.,Ltd

ADS55A160HT датащи(HTML) 3 Page - Advanced (Shenzhen) Electronics Co.,Ltd

  ADS55A160HT Datasheet HTML 1Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS55A160HT Datasheet HTML 2Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS55A160HT Datasheet HTML 3Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS55A160HT Datasheet HTML 4Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS55A160HT Datasheet HTML 5Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS55A160HT Datasheet HTML 6Page - Advanced (Shenzhen) Electronics Co.,Ltd  
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www.advsemi.com
Feb,2013 -Rev.3.01
ADV
FIG.2: Average on-state current VS Allowable
case Temperature(Single phase half wave)
FIG.3:
Gate
trigger
current
VS
Junction
temperature
FIG.1: Maximum average power dissipation
(Single phase half wave)
FIG.4:
Rated
surge
on-state
current
( Non-Repetitive)
FIG.5: On-state characteristics(Max)
0
50
100
150
200
250
IGT(Tj)/IGT(25°C) x 100(%)
150
125
100
75
50
25
-50
0
-25
Power Dissipation(W)
40
32
16
8
Power Dissipation(W)
0
5
10
15
20
25
30
35
40
45
50
24
θ=180°
360°
θ
0
10
20
30
40
50
Average On-state Current(A)
150
120
90
60
30
0
360°
θ
θ=180°
0
80
160
240
320
400
480
560
640
Surge On-State Current(A)
102
10
1
f=50Hz
Tj=25°C Max
ITM(A),On-State Current
100
101
102
103
4
3.5
3
2.5
2
1.5
1
0.5
(1)
(2)
(1)Tj=25°C Max
(2)Tj=125°C Max



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