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ADS40A60FS датащи(PDF) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

номер детали ADS40A60FS
подробное описание детали  SCRs
PDF  6 Pages
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производитель  ADV [Advanced (Shenzhen) Electronics Co.,Ltd]
домашняя страница  http://www.advsemi.com/en/
Logo ADV - Advanced (Shenzhen) Electronics Co.,Ltd

ADS40A60FS датащи(HTML) 2 Page - Advanced (Shenzhen) Electronics Co.,Ltd

  ADS40A60FS Datasheet HTML 1Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS40A60FS Datasheet HTML 2Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS40A60FS Datasheet HTML 3Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS40A60FS Datasheet HTML 4Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS40A60FS Datasheet HTML 5Page - Advanced (Shenzhen) Electronics Co.,Ltd ADS40A60FS Datasheet HTML 6Page - Advanced (Shenzhen) Electronics Co.,Ltd  
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                                       ADS40A60F/80F
 
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www.advsemi.com
Feb,2013 -Rev.3.01
ADV
Electrical Characteristics ( Tj = 25°C unless otherwise specified )
Symbol
Items
Conditions
ADS40A60F/80F
Unit
S
Blank
IDRM
IRRM
Peak Forward Reverse
Blocking Current
VDRM = VRRM
Tj = 25°C
Max.
10
uA
VDRM = VRRM
Tj = 125°C
4
mA
VTM
Peak On-State Voltage
ITM = 80A, tp = 380 μs
Max.
1.6
V
VGD
Non-Trigger Gate Voltage
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
Min.
0.2
V
VGT
Gate Trigger Voltage
VD = 12V ，RL = 33Ω
Max.
1.3
V
IGT
Gate Trigger Current
Max.
15
30
mA
IH
Holding Current
IT = 0.5A
Max.
30
40
mA
IL
Latching Current
IG = 1.2 IGT
Max.
50
50
mA
dV/dt
Critical Rate of Rise of
Off-State Voltage
VD = 2/3VDRM gate open
Tj = 125°C
Min.
1000
1500
V/μs
Rth(j-c)
Junction to case (AC)
Max.
1.0
°C/W
Rth(j-a)
Junction to ambient
Max.
60
°C/W



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