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CP2201 датащи(PDF) 74 Page - Silicon Laboratories |
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CP2201 датащи(HTML) 74 Page - Silicon Laboratories |
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74 / 108 page ![]() CP2200/1 74 Rev. 1.0 13.2. Reading the Flash Memory Flash reads occur much faster than Flash write or erase operations and are completed within the minimum read strobe time specified by the parallel host interface. Flash is read using the FLASHADDRH:FLASHADDRL, FLASHDATA, and FLASHAUTORD registers. The FLASHAUTORD register provides an efficient method of accessing sequential data in Flash by automatically incrementing the Flash address pointer after each read. 13.2.1. Flash Read Procedure Step 1: Set FLASHADDRH:FLASHADDRL to the address of the byte to be read. Step 2: Read the value of the byte from FLASHDATA. 13.2.2. Multiple Byte Flash Read Procedure Step 1: Set FLASHADDRH:FLASHADDRL to the address of the first byte to be read. Step 2: For each byte, read the value from FLASHAUTORD. Table 18. Flash Electrical Characteristics VDD = 3.1 to 3.6 V, –40 to +85 °C unless otherwise specified. Parameters Conditions Min Typ Max Units Flash Size 8192 — — bytes Endurance 20k 100k — Erase/ Write Erase Cycle Time — 11 — ms Write Cycle Time 40 55 70 µs |
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