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AS6C4008 датащи(PDF) 4 Page - Alliance Semiconductor Corporation

номер детали AS6C4008
подробное описание детали  512K X 8 BIT LOW POWER CMOS SRAM
PDF  15 Pages
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производитель  ALSC [Alliance Semiconductor Corporation]
домашняя страница  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS6C4008 датащи(HTML) 4 Page - Alliance Semiconductor Corporation

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WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
(4)
TOW
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
Notes :
1.WE#, CE# must be high during all address transitions.
2.A write occurs during the overlap of a low CE#, low WE#.
3.During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
®
February 2007
AS6C4008
02/FEB/07, v 1.0
Alliance Memory Inc.
Page 4 of 15
512K X 8 BIT LOW POWER CMOS SRAM



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