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TPW65R044MFD датащи(PDF) 2 Page - Wuxi Unigroup Microelectronics Company

номер детали TPW65R044MFD
подробное описание детали  650V Super-Junction Power MOSFET
PDF  8 Pages
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производитель  WUMC [Wuxi Unigroup Microelectronics Company]
домашняя страница  http://www.tsinghuaicwx.com/en/index.asp
Logo WUMC - Wuxi Unigroup Microelectronics Company

TPW65R044MFD датащи(HTML) 2 Page - Wuxi Unigroup Microelectronics Company

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TPW65R044MFD
Wuxi Unigroup Microelectronics Co.,Ltd
V1.0
www.tsinghuaicwx.com
2
Absolute Maximum Ratings T
C = 25º
C, unless otherwise noted
Parameter
Symbol
Value
Unit
Drain-Source Voltage (V
GS = 0V)
V
DSS
650
V
Continuous Drain Current
T
C = 25ºC
I
D
72
A
TC = 100ºC
43.2
Pulsed Drain Current
(note1)
I
DM
216
A
Gate-Source Voltage
V
GSS
±30
V
Single Pulse Avalanche Energy
(note2)
E
AS
2185
mJ
Repetitive Avalanche Energy
(note2)
E
AR
3.31
mJ
Avalanche Current
I
AR
13.7
A
MOSFET dv/dt ruggedness, V
DS = 0...480V
dv/dt
50
V/ns
Power Dissipation
P
D
500
W
Continuous Body Diode Current
I
S
61
A
Pulsed Diode Forward Current
(note1)
I
SM
216
Reverse diode dv/dt
(note3)
dv/dt
50
V/ns
Maximum diode commutation speed
(note3)
di
f/dt
900
A/us
Operating Junction and Storage Temperature Range
T
J, Tstg
-55~+150
ºC
Thermal Resistance
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-Case
R
thJC
0.25
ºC/W
Thermal Resistance, Junction-to-Ambient
R
thJA
62



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