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MCH6937 датащи(PDF) 2 Page - Sanyo Semicon Device

номер детали MCH6937
подробное описание детали  TR : PNP Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Power Management Switch
PDF  6 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

MCH6937 датащи(HTML) 2 Page - Sanyo Semicon Device

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MCH6937
No.8040-2/6
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[TR]
Collector Cutoff Current
ICBO
VCB=--30V, IE=0A
--100
nA
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--100
nA
DC Current Gain
hFE
VCE=--2V, IC=--10mA
200
500
Gain-Bandwidth Product
fT
VCE=--10V, IC=--50mA
520
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
3
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--100mA, IB=--5mA
--110
--220
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--100mA, IB=--5mA
--0.9
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10µA, IE=0A
--30
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--30
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10µA, IC=0A
--5
V
Turn-ON Time
ton
See specified Test Circuit.
39
ns
Storage Time
tstg
See specified Test Circuit.
200
ns
Fall Time
tf
See specified Test Circuit.
48
ns
[FET]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
10
µA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
µA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100µA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=80mA
0.15
0.22
S
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Ω
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
65
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
155
ns
Fall Time
tf
See specified Test Circuit.
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=150mA
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
nC
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
1.2
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7022A-017
5
6
1
4
23
1 : Source
2 : Gate
3 : Collector
4 : Emitter
5 : Base
6 : Drain
Top view
1 : Source
2 : Gate
3 : Collector
4 : Emitter
5 : Base
6 : Drain
SANYO : MCPH6
2.0
0.3
0.65
0.15
0 to 0.02
65
4
12
3
65
4
12
3



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