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LV5103LP датащи(PDF) 4 Page - Sanyo Semicon Device

номер детали LV5103LP
подробное описание детали  Bi-CMOS LSI Cell Phone Power Supply IC
PDF  11 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

LV5103LP датащи(HTML) 4 Page - Sanyo Semicon Device

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LV5103LP
No.A0585-4/11
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
LDO7
Output voltage
VOR7
IO = 30mA
1.76
1.8
1.84
V
Output current
IM7
150
mA
Load regulation
VL7
IO = 1 to 150mA
75
150
mV
Line regulation 1
VR7
VBAT = 3.1 to 4.5V, IO = 100mA
10
60
mV
Output voltage temperature
coefficient
∆VT7
Ta = -30 to 75
°C, IO = 30mA
±100
ppm/
°C
Ripple rejection ratio
VRL7
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON7
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO7 PS MODE
Output voltage
VOR7P
IO = 30mA
1.74
1.8
1.86
V
Output current
IM7P
10
mA
Load regulation
VL7P
IO = 1 to 10mA
75
150
mV
Line regulation 1
VR7P
VBAT = 3.1 to 4.5V, IO = 10mA
10
60
mV
Output voltage temperature
coefficient
∆VT7P
Ta = -30 to 75
°C, IO = 30mA
±100
ppm/
°C
Ripple rejection ratio
VRL7P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON7P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
LDO8
Output voltage 1
VOR81
IO = 30mA
1.17
1.2
1.23
V
Output voltage 2
VOR82
IO = 200mA
1.13
1.2
1.27
V
Output current 1
IM81
500
mA
Output current 2
IM82
VBAT = 3.4V, VOUT ≥ 1.1V
500
mA
Load regulation
VL8
IO = 1 to 500mA
30
70
mV
Line regulation 1
VR8
VBAT = 3.1 to 4.5V, IO = 330mA
10
60
mV
Output voltage temperature
coefficient
∆VT8
Ta = -30 to 75
°C, IO = 30mA
±100
ppm/
°C
Ripple rejection ratio
VRL8
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON8
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO8 PS MODE
Output voltage
VOR8P
IO = 30mA
1.16
1.2
1.24
V
Output current
IM8P
10
mA
Load regulation
VL8P
IO = 1 to 10mA
30
100
mV
Line regulation 1
VR8P
VBAT = 3.1 to 4.5V, IO = 10mA
10
60
mV
Output voltage temperature
coefficient
∆VT8P
Ta = -30 to 75
°C, IO = 30mA
±100
ppm/
°C
Ripple rejection ratio
VRL8P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON8P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
DET24
Low-level detection voltage
VDL1
2.35
2.4
2.45
V
High-level detection voltage
VDH1
2.62
2.7
2.78
V
VBATDET
Low-level detection voltage
VDL2
2.3
2.4
2.5
V
High-level detection voltage
VDH2
3.1
3.2
3.3
V
BVLT Switch
BVLT switch on-resistance
RSWBV
IO = 3mA, BVLTON : HIGH
300
400
Ω
BVLT switch leakage current
ISWBV
BVLTON : LOW
0
1
µA
Control Pins
High level 1
VH1
RFPDN, ADPTDETIN, PWRHOLD,
POWERSAVE, SWCTL, BVLTON, STCLR
1.5
VBAT
V
Low level 1
VL1
RFPDN, ADPTDETIN, PWRHOLD,
POWERSAVE, SWCTL, BVLTON, STCLR
0
0.3
V
High level 2
VH2
PWRKEY
VBAT
×0.8
VBAT
V
Low level 2
VL2
PWRKEY
0
VBAT
×0.2
V



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