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98458 датащи(PDF) 1 Page - Vishay Siliconix |
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98458 датащи(HTML) 1 Page - Vishay Siliconix |
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1 / 5 page ![]() SM5S10CA thru SM5S85CA www.vishay.com Vishay General Semiconductor Revision: 03-Mar-2023 1 Document Number: 98458 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface-Mount PAR® Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions LINKS TO ADDITIONAL RESOURCES FEATURES • RoHS compliant junction passivation •TJ = 175 °C capability suitable for high reliability and automotive requirement • Bidirectional • Low leakage current • High surge capability • Meets ISO 7637-2 and ISO 16750-2 surge specification (varied by test condition) • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lightning, especially for automotive load dump protection application. MECHANICAL DATA Case: DO-218AB Molding compound meets UL 94 V-0 flammability rating Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 HM3 suffix meets JESD 201 class 2 whisker test Polarity: bidirectional, no cathode band Notes (1) Non-repetitive current pulse derated above TA = 25 °C, per fig. 3 (2) Power calculation is based on IPPM times defined maximum clamping voltage by pulse width PRIMARY CHARACTERISTICS VBR 11.1 V to 104 V VWM 10 V to 85 V PPPM (10 x 1000 μs) 3600 W PPPM (10 x 10 000 μs) 2200 W for 12CA to 20CA 2400 W for 22CA to 85CA PD 5 W TJ max. 175 °C Polarity Bidirectional Package DO-218AB DO-218AB 333 DDD3 D 3D Models MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with 10/1000 μs waveform (fig. 4) PPPM (1)(2) 3600 W with 10/10 000 μs waveform (fig. 5) 12CA to 20CA 2200 22CA to 85CA 2400 Power dissipation on infinite heatsink at TC = 25 °C (fig. 2) PD 5W Peak pulse current with 10/1000 μs waveform (fig. 4 ) IPPM (1) See next table A Operating junction and storage temperature range TJ, TSTG -55 to +175 °C |
Аналогичный номер детали - 98458 |
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Аналогичное описание - 98458 |
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