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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LB11867FV датащи(PDF) 2 Page - Sanyo Semicon Device |
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LB11867FV датащи(HTML) 2 Page - Sanyo Semicon Device |
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2 / 9 page  LB11867FV No.A0195-2/9 Specifications Absolute Maximum Ratings at Ta = 25 °C Parameter Symbol Conditions Ratings Unit VCC pin maximum supply voltage VCC max 18 V OUTN pin maximum output current IOUTN max 20 mA OUTP pin maximum Sink current IOUTP max 20 mA OUT pin output withstand voltage VOUT max 18 V VTH, RMI pins withstand voltage VVTH, VRMI max 7V S-S pin withstand voltage VS-S max 7V FG output pin withstand voltage VFG max 19 V FG pin maximum output current IFG max 10 mA 5VREG pin maximum output current I5VREG max 20 mA Allowable power dissipation Pd max with specified substrate *1 800 mW Operating temperature Topr *2 -30 to 95 °C Storage temperature Tstg -55 to 150 °C *1 Specified substrate: 114.3mm ×76.1mm×1.6mm, glass epoxy board. *2 Tj max=150°C must not be exceeded. Recommended Operating Conditions at Ta = 25 °C Parameter Symbol Conditions Ratings Unit VCC Supply voltage VCC 5.5 to 16 V VTH, RMI input voltage range VTH, RMI 0 to 5 V Hall input common-phase input voltage range VICM 0.2 to 3 V Electrical Characteristics at Ta = 25°C, VCC = 12V Ratings Parameter Symbol Conditions min typ max Unit ICC1 During drive 5.5 7.5 9.5 mA Circuit current ICC2 During lock protection 5.5 7.5 9.5 mA 5VREG voltage 5VREG I5VREG = 5mA 4.80 4.95 5.10 V Current limiting voltage VLIM 185 200 215 mV CPWM pin “H” level voltage VCPWMH 2.8 3.0 3.2 V CPWM pin “L” level voltage VCPWML 0.9 1.1 1.3 V CPWM pin charge current ICPWM1 VCPWM = 0.5V 24 30 36 µA CPWM pin discharge current ICPWM2 VCPWM = 3.5V 21 27 33 µA CPWM Oscillation frequency FPWM C = 220PF 30 kHz CT pin “H” level voltage VCTH 2.8 3.0 3.2 V CT pin “L” level voltage VCTL 0.9 1.1 1.3 V CT pin charge current ICT1 VCT = 0.5V 1.6 2.0 2.5 µA CT pin discharge current ICT2 VCT = 3.5V 0.16 0.20 0.25 µA CT pin charge/discharge ratio RCT ICT1/ICT2 8 10 12 times S-S pin discharge current IS-S VS-S = 1V 0.4 0.5 0.6 µA OUTN output H-level voltage VONH IO = 10mA VCC-0.85 VCC-1.00 V OUTN output L-level voltage VONL IO = 10mA 0.9 1.00 V OUTP output L-level voltage VOPL IO = 10mA 0.5 0.65 V Hall input sensitivity VHN IN+, IN- differential voltage (including offset and hysteresis) ±10 ±20 mV FG output L-level voltage VFGL IFG = 5mA 0.15 0.30 V FG pin leakage current IFGL VFG = 19V 20 µA VTH/RMI pin bias current IVTH/IRMI CPWM = VTH/RMI = 2V 0.1 µA |
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