IDT7130LA55JGI datasheet(9/19 Pages) IDT

номер детали	IDT7130LA55JGI

подробное описание детали	HIGH SPEED 1K X 8 DUAL-PORT STATIC SRAM

PDF	19 Pages

Scroll/Zoom	100%

производитель	IDT [Integrated Device Technology]

домашняя страница	http://www.idt.com

Logo

9 / 19 page

IDT7130SA/LA and IDT7140SA/LA

High-Speed 1K x 8 Dual-Port Static SRAM

Military, Industrial and Commercial Temperature Ranges

Timing Waveform of Read Cycle No. 2, Either Side(3)

NOTES:

1. Timing depends on which signal is asserted last,

OE or CE.

2. Timing depends on which signal is deaserted first,

OE or CE.

3. R/

W = VIH and OE = VIL, and the address is valid prior to or coincidental with CE transition LOW.

Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.

Timing Waveform of Read Cycle No. 1, Either Side(1)

ADDRESS

DATAOUT

tRC

tOH

PREVIOUS DATA VALID

tAA

tOH

DATA VALID

2689 drw 08

tBDDH

(2,3)

BUSYOUT

NOTES:

1. R/

W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition LOW.

2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same the address location. For simultaneous read operations,

BUSY has no relationship to valid output data.

3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.

tACE

tAOE

tHZ

tLZ

tPD

VALID DATA

tPU

50%

DATAOUT

CURRENT

ICC

ISS

50%

2689 drw 09

(4)

(1)

(2)

(4)

tLZ

tHZ

IDT7130LA55JGI датащи(PDF) 9 Page - Integrated Device Technology

IDT7130LA55JGI датащи(HTML) 9 Page - Integrated Device Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

датащи скачать

ссылки URL