| поискавой системы для электроныых деталей |
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VT1000 датащи(PDF) 1 Page - Electronic devices inc. |
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VT1000 датащи(HTML) 1 Page - Electronic devices inc. |
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1 / 2 page ![]() VT RVT HIGH VOLTAGE 50 mA SILICON RECTIFIERS EDI Type PRV Volts REVERSE RECOVERY TIME (Fig.4) VT1000 10,000 - VT1200 12,000 - VT1500 15,000 - RVT1000 10,000 100 ns max. RVT1200 12,000 100 ns max. RVT1500 15,000 100 ns max. ELECTRICAL CHARACTERISTICS (at TA=25 C Unless Otherwise Specified) Average Rectified Forward Current @ 50 oC, I O 50 mA Max. Peak Surge Current, IFSM (8.3ms) 5 Amp Max. Forward Voltage Drop @ 50 m A, VF 28Volts Max. DC Reverse Current @ PRV and 25 oC, IR 1 Max. DC Reverse Current @ PRV and100 oC, IR 25 Ambient Operating Temperature Range, TA Storage Temperature Range, TSTG NOTES: o A A SMALL SIZE MOLDED PACKAGE PRV 10,000 TO 15,000 VOLTS FAST RECOVERY (R_SERIES) AVALANCHE CHARACTERISTICS LOW LEAKAGE -55 to + 125 C o -55 to + 150 C o 1.It is recommended that a proper heat sink be used on the terminals of this device between the body and soldering point to prevent damage from excess heat. 2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated. EDI reservesthe rightto changethese specificationsat any time withoutnotice. |
Аналогичный номер детали - VT1000 |
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Аналогичное описание - VT1000 |
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