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P4C1048L-100PM датащи(PDF) 6 Page - Pyramid Semiconductor Corporation

номер детали P4C1048L-100PM
подробное описание детали  LOW POWER 512K x 8 CMOS STATIC RAM
PDF  12 Pages
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производитель  PYRAMID [Pyramid Semiconductor Corporation]
домашняя страница  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1048L-100PM датащи(HTML) 6 Page - Pyramid Semiconductor Corporation

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P4C1048L
Page 6 of 12
Document # SRAM129 REV D
-70
Notes:
6.
CE and WE are LOW for WRITE cycle.
7.
OE is LOW for this WRITE cycle to show t
WZ and tOW.
8. If
CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state.
9. Write Cycle Time is measured from the last valid address to the first transitioning address.
AC CHARACTERISTICS - WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
WRITE CYCLE NO. 1 (
WE
WE
WE
WE
WE CONTROLLED)(6,7)
Symbol
Parameter
Max
-100
Max
Unit
Min
Min
t
WC
t
CW
t
AS
t
WP
t
AH
t
DH
t
WZ
t
OW
Write Cycle Time
70
100
ns
Chip Enable Time
to End of Write
60
75
ns
Address Valid to
End of Write
60
75
ns
Address Set-up
Time
00
ns
Write Pulse Width
50
60
ns
Address Hold
Time
00
ns
Data Valid to End
of Write
35
45
ns
Data Hold Time
0
0
ns
Write Enable to
Output in High Z
25
35
ns
Output Active from
End of Write
55
ns
t
AW
t
DW
-55
Max
Min
55
40
40
0
40
0
30
0
20
5
-45
Max
Min
45
35
35
0
35
0
25
0
18
5



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