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P4C1049 датащи(PDF) 3 Page - Pyramid Semiconductor Corporation

номер детали P4C1049
подробное описание детали  HIGH SPEED 512K x 8 STATIC CMOS RAM
PDF  12 Pages
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производитель  PYRAMID [Pyramid Semiconductor Corporation]
домашняя страница  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1049 датащи(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C1049
Page 3 of 12
Document # SRAM128 REV OR
*V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
Military
–15
N/A
–20
–25
–35
–45
–55
–70
Unit
N/A
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
N/A
N/A
N/A
220
N/A
185
190
180
N/A
185
175
N/A
DATA RETENTION CHARACTERISTICS (P4C1049L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
†
Parameter
V
CC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditons
CE
≥ V
CC –0.2V,
V
IN ≥ VCC –0.2V
or V
IN ≤ 0.2V
Min
3.0
0
t
RC
§
Typ.*
V
CC = 3.0V
Max
V
CC = 3.0V
Unit
23
V
mA
ns
ns
*T
A = +25°C
§t
RC = Read Cycle Time
†
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
165
170
200
195
185
175



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