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P4C116-35JM датащи(PDF) 3 Page - Pyramid Semiconductor Corporation

номер детали P4C116-35JM
подробное описание детали  ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS
PDF  14 Pages
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производитель  PYRAMID [Pyramid Semiconductor Corporation]
домашняя страница  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C116-35JM датащи(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C116/P4C116L
Page 3 of 14
Document # SRAM110 REV A
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(V
CC = 5V ± 10%, All Temperature Ranges)
(2)
Sym.
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
Parameter
Output Enable Low to Data Valid
Chip Enable to Power Up Time
Chip Disable to Power Down
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Hold from Address Change
Chip Enable to Output in Low Z
Chip Disable to Output in High Z
Output Enable Low to Low Z
Output Enable High to High Z
–10
Min Max
–12
Min Max
–15
Min Max
–20
Min Max
–25
Min Max
–35
Min Max
Unit
15
15
15
2
2
7
10
0
8
0
15
20
2
2
0
0
20
20
8
10
9
20
25
2
3
0
0
25
25
10
15
12
20
35
2
3
0
0
35
35
15
20
15
25
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
10
2
2
0
0
10
10
5
10
12
2
2
0
0
12
12
6
12
*V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Military
–10
N/A
–12
–20
–25
–35
Unit
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
170
160
155
150
180
170
160
155
150
140
–15
67
8
6
DATA RETENTION CHARACTERISTICS (P4C116L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
†
Parameter
V
CC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditons
CE
≥ V
CC –0.2V,
V
IN ≥ VCC –0.2V
or V
IN ≤ 0.2V
Min
2.0
0
t
RC
§
Typ.*
V
CC =
2.0V
3.0V
Max
V
CC =
2.0V
3.0V
Unit
10
15
600
900
V
µA
ns
ns
*T
A = +25°C
§t
RC = Read Cycle Time
†
This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM



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