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P4C164-8CWCLF датащи(PDF) 3 Page - Pyramid Semiconductor Corporation

номер детали P4C164-8CWCLF
подробное описание детали  ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS
PDF  16 Pages
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производитель  PYRAMID [Pyramid Semiconductor Corporation]
домашняя страница  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C164-8CWCLF датащи(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C164
Page 3 of 16
Document # SRAM115 REV F
DATA RETENTION CHARACTERISTICS (P4C164L, Military Temperature Only)
Typ.*
Max
Symbol
Parameter
Test Condition
Min
V
CC=VCC=
Unit
2.0V
3.0V
2.0V
3.0V
V
DR
V
CC for Data Retention
2.0
V
I
CCDR
Data Retention Current
10
15
200
300
µA
t
CDR
Chip Deselect to
0
ns
Data Retention Time
t
R
†
Operation Recovery Time
t
RC
§
ns
*T
A = +25°C
§t
RC = Read Cycle Time
†This parameter is guaranteed but not tested.
*V
CC = 5.5V.
Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
1 = VIL, CE2 = VIH, OE = VIH
POWER DISSIPATION CHARACTERISTICS VS. SPEED
DATA RETENTION WAVEFORM
CE
1 ≥ VCC – 0.2V or
CE
2 ≤ 0.2V, VIN ≥ VCC – 0.2V
or V
IN ≤ 0.2V
Symbol
Parameter
Temperature
Range
-8
-10
-12
-15
-20
-25
-35
45
-70 -100
Unit
Commercial
200 180 170 160 155 150 145 N/A
130 125
mA
Industrial
N/A
190 180 170 160 155 150 N/A
145 140
mA
Military
N/A
N/A
180 170 160 155 150 145 145 145
mA
Dynamic Operating Current*
ICC



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