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P3C1256 датащи(PDF) 5 Page - Pyramid Semiconductor Corporation

номер детали P3C1256
подробное описание детали  HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM
PDF  10 Pages
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производитель  PYRAMID [Pyramid Semiconductor Corporation]
домашняя страница  http://www.pyramidsemiconductor.com
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P3C1256
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Document # SRAM122 REV B
AC CHARACTERISTICS—WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
Parameter
Min
Unit
t
WC
ns
t
CW
Chip Enable Time to
End of Write
t
AW
Address Valid to
End of Write
t
AS
Address Set-up
Time
ns
t
WP
Write Pulse Width
ns
t
AH
Address Hold Time
Data Valid to End of
Write
Data Hold Time
Write Enable to
Output in High Z
Output Active from
End of Write
Write Cycle Time
0
9
-12
ns
ns
-25
-20
-15
Max
Min
Max
25
0
18
Min
20
0
15
Max
Min
Max
15
0
11
12
ns
t
DW
ns
t
DH
00
0
0
ns
t
WZ
78
10
11
ns
t
OW
33
3
3
ns
10
10
0
8
12
15
18
12
15
18
0
10
0
12
0
15
Notes:
10. CE and WE must be LOW for WRITE cycle.
11. OE is LOW for this WRITE cycle to show t
WZ and tOW.
12. If CE goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state
13. Write Cycle Time is measured from the last valid address to the first
transitioning address.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE
WE
WE
WE
WE CONTROLLED)(10,11)



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