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P3C1256 датащи(PDF) 5 Page - Pyramid Semiconductor Corporation |
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P3C1256 датащи(HTML) 5 Page - Pyramid Semiconductor Corporation |
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5 / 10 page ![]() P3C1256 Page 5 of 10 Document # SRAM122 REV B AC CHARACTERISTICS—WRITE CYCLE (Over Recommended Operating Temperature & Supply Voltage) Symbol Parameter Min Unit t WC ns t CW Chip Enable Time to End of Write t AW Address Valid to End of Write t AS Address Set-up Time ns t WP Write Pulse Width ns t AH Address Hold Time Data Valid to End of Write Data Hold Time Write Enable to Output in High Z Output Active from End of Write Write Cycle Time 0 9 -12 ns ns -25 -20 -15 Max Min Max 25 0 18 Min 20 0 15 Max Min Max 15 0 11 12 ns t DW ns t DH 00 0 0 ns t WZ 78 10 11 ns t OW 33 3 3 ns 10 10 0 8 12 15 18 12 15 18 0 10 0 12 0 15 Notes: 10. CE and WE must be LOW for WRITE cycle. 11. OE is LOW for this WRITE cycle to show t WZ and tOW. 12. If CE goes HIGH simultaneously with WE HIGH, the output remains in a high impedance state 13. Write Cycle Time is measured from the last valid address to the first transitioning address. TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE WE WE WE WE CONTROLLED)(10,11) |
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