BSR33PAS

80 V, 1 A PNP medium power transistor

9 September 2024

Product data sheet

1. General description

PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-

Mounted Device (SMD) plastic package with medium power capability and Side-Wettable Flanks

(SWF).

2. Features and benefits

• High collector current capability IC and ICM

• Reduced Printed-Circuit Board (PCB) area requirements

• Leadless small SMD plastic package with solderable side pads

• Exposed heatsink for excellent thermal and electrical conductivity

• Suitable for Automatic Optical Inspection (AOI) of solder point

3. Applications

• Linear voltage regulators

• High-side switches

• Battery-driven devices

• MOSFET drivers

• Amplifiers

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

-

-

-80

V

IC

collector current

-

-

-1

A

ICM

peak collector current

single pulse; tp ≤ 1 ms

-

-

-2

A

hFE

DC current gain

VCE = -5 V; IC = -100 mA; pulsed; tp ≤

300 µs; δ ≤ 0.01; Tamb = 25 °C

100

-

300