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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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M65KG512AB датащи(PDF) 39 Page - STMicroelectronics |
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M65KG512AB датащи(HTML) 39 Page - STMicroelectronics |
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39 / 54 page  M65KG526AB DC and ac parameters 39/54 Figure 17. Write followed by Write in a different bank 1. If the consecutive Write operation targets an active row, the second WRIT command must be issued after a minimum delay of tCK to interrupt the previous Write operation. 2. If the consecutive Write operation targets an idle row, precharge the bank (PRE) without interrupting the previous Write operation. tRP after the PRE command, issue the ACT command. The consecutive WRIT command can be issued tRCD after the ACT command. Figure 18. Write operation with Auto Precharge ACT ACT NOP Command K K DIA0 DIA1 UDQS/ LDQS DQ0-DQ15 DIB0 DIB1 ai11208b Note: 1. Burst Length = 4 Row 0 Address BA0-BA1 NOP Row 1 DIB2 Bank A Active Data Read from Bank A Data Read from Bank D DIB3 WRIT WRIT NOP Column A Column B Bank D Active tRCD ACT NOP WRITEA NOP Command K K DI0 DI1 UDQS, LDQS DQ0-DQ15 DI2 DI3 ai10587c Note: Burst Length = 4 tWPD tRCD ACT UDQM, LDQM tRP tRAS(min) Start of Internal Auto Precharge cycle |
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