Nexperia

BC55xPAS series

60 V, 1 A NPN medium power transistors

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCB = 30 V; IE = 0 A; Tamb = 25 °C

-

-

100

nA

ICBO

collector-base cut-off

current (emitter open)

VCB = 30 V; IE = 0 A; Tamb = 150 °C

-

-

10

µA

IEBO

emitter-base cut-off

current (collector open)

VEB = 5 V; IC = 0 A; Tamb = 25 °C

-

-

100

nA

DC current gain

BC55PAS

63

-

-

BC55-10PAS

63

-

-

BC55-16PAS

VCE = 2 V; IC = 5 mA; Tamb = 25 °C

63

-

-

BC55PAS

[1]

63

-

250

BC55-10PAS

[1]

63

-

160

BC55-16PAS

VCE = 2 V; IC = 150 mA; Tamb = 25 °C

[1]

100

-

250

BC55PAS

[1]

40

-

-

BC55-10PAS

[1]

40

-

-

hFE

BC55-16PAS

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1]

40

-

-

VCEsat

collector-emitter

saturation voltage

IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1]

-

-

500

mV

VBE

base-emitter voltage

VCE = 2 V; IC = 500 mA; Tamb = 25 °C

[1]

-

-

1

V

Cc

collector capacitance

VCB = 10 V; ie = 0 A; f = 1 MHz;

Tamb = 25 °C

-

6

-

pF

fT

transition frequency

VCE = 5 V; IC = 50 mA; f = 100 MHz;

Tamb = 25 °C

100

180

-

MHz

[1] pulsed; tp ≤ 300 µs; δ ≤ 0.02

006aac691

100

200

300

hFE

0

IC (A)

10- 4

10

1

10- 3

10- 1

10- 2

(1)

(2)

(3)

VCE = 2 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -55 °C

Fig. 7. DC current gain as a function of collector

current; typical values

VCE (V)

0

2.0

1.6

0.8

1.2

0.4

006aaa084

0.8

0.4

1.2

1.6

IC

(A)

0

25

20

15

10

5

IB (mA) = 50 45 40 35 30

Tamb = 25 °C

Fig. 8. Collector current as a function of collector-

emitter voltage; typical values

BC55XPAS_SER

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Nexperia B.V. 2024. All rights reserved

Product data sheet

9 October 2024

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