2SC6083 datasheet(2/4 Pages) SANYO

номер детали	2SC6083

подробное описание детали	NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

PDF	4 Pages

Scroll/Zoom	100%

производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6083

No. A0899-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=0.5A, IB=0.1A

0.8

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=0.5A, IB=0.1A

1.5

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=1mA, IE=0A

700

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=5mA, RBE=∞

350

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=1mA, IC=0A

Turn-ON Time

ton

IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V

1.0

µs

Storage Time

tstg

IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V

2.5

µs

Fall Time

IC=0.5A, IB1=0.05A, IB2=--0.5A, RL=400Ω, VCC=200V

0.3

µs

Package Dimensions

Switching Time Test Circuit

unit : mm (typ)

7524-004

VCC=200V

VBE= --5V

50Ω

INPUT

OUTPUT

100µF

470µF

PW=20µs

IB1

D.C.≤1%

IB2

4.0

3.8

3.0

2.2

0.4

0.5

1.3

1 : Emitter

2 : Collector

3 : Base

SANYO : SPA

Collector-to-Emitter Voltage, VCE -- V

Base-to-Emitter Voltage, VBE -- V

IC -- VBE

IC -- VCE

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

IT12786

IT12787

IB=0mA

10mA

20mA

30mA

40mA

50mA

60mA

70mA

80mA

90mA

200mA

VCE=5V

150mA

100mA

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