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UMA1021 датащи(PDF) 8 Page - NXP Semiconductors

номер детали UMA1021
подробное описание детали  Low-voltage frequency synthesizer for radio telephones
PDF  16 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

UMA1021 датащи(HTML) 8 Page - NXP Semiconductors

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1998 Nov 19
8
Philips Semiconductors
Product specification
Low-voltage frequency synthesizer for
radio telephones
UMA1021AM
Charge pump output; pin 2
Vo(compl)
compliance output voltage
Rset = 5.6 kΩ
0.4
−
VCC − 0.4 V
Io(err)
output current error
Rset = 5.6 kΩ−25
−
+25
%
Io(match)
sink-to-source current matching
Rset = 5.6 kΩ−
±5
−
%
IL
leakage current
Rset = 5.6 kΩ;
charge pump off;
Vo(compl) = 1⁄2VCC
−5
±1+5
nA
Phase noise
N900
RF synthesizer’s contribution to
close-in phase noise of 900 MHz
VCO signal inside the closed loop
bandwidth
fxtal = 13 MHz;
Vxtal = 0 dBm;
fph(comp) = 200 kHz
−−88
−
dBc/Hz
N1800
RF synthesizer’s contribution to
close-in phase noise of 1.8 GHz
VCO signal inside the closed loop
bandwidth
fxtal = 13 MHz;
Vxtal = 0 dBm;
fph(comp) = 200 kHz
−−82
−
dBc/Hz
Interface logic inputs; pins 7, 9, 10 and 11
VIH
HIGH-level input voltage
0.7VDD
−
VDD + 0.3 V
VIL
LOW-level input voltage
−0.3
−
0.3VDD
V
Ii(bias)
input bias current
logic 1 or logic 0
−5
−
+5
µA
Ci
input capacitance
−
2
−
pF
Out-of-lock detector output; pin 1
VOL
LOW-level output voltage
open-drain output
−−
0.3VDD
V
Eϕ(th)
threshold phase error
open-drain output
−
25
−
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT



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