2SC3807MP

No. A0629-1/4

Applications

•

Low-frequency general-purpose amplifiers, drivers.

Features

•

Large current capacity (IC=2A).

•

Adoption of MBIT process.

•

High DC current gain (hFE=1000 to 2000).

•

•

High VEBO(VEBO≥15V).

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

30

V

Collector-to-Emitter Voltage

VCEO

25

V

Emitter-to-Base Voltage

VEBO

17

V

Collector Current

IC

2A

Collector Current (Pulse)

ICP

4A

Collector Dissipation

PC

1.1

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Ordering number : ENA0629

42507LA TI IM TC-00000660

SANYO Semiconductors

DATA SHEET

2SC3807MP

NPN Epitaxial Planar Silicon Transistor

25V / 2A High-hFE, Low Frequency

General-Purpose Amplifier Applications

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are not

guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an independent

device, the customer should always evaluate and test devices mounted in the customer

's products or

equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be

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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety

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