2SA2197 / 2SC6102

No. A0463-1/5

Applications

•

Relay drivers, lamp drivers, motor drivers, flash.

Features

•

Adoption of MBIT process.

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

•

High allowable power dissipation.

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

(--30)40

V

Collector-to-Emitter Voltage

VCEO

(--)30

V

Emitter-to-Base Voltage

VEBO

(--)6

V

Collector Current

IC

(--)7

A

Collector Current (Pulse)

ICP

(--)9

A

Base Current

IB

(--)1.2

A

Collector Dissipation

PC

1W

Tc=25

°C10

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=(--)30V, IE=0A

(--)0.1

µA

Emitter Cutoff Current

IEBO

VEB=(--)4V, IC=0A

(--)0.1

µA

DC Current Gain

hFE

VCE=(--)2V, IC=(--)500mA

200

560

Gain-Bandwidth Product

fT

VCE=(--)10V, IC=(--)500mA

(250)290

MHz

Output Capacitance

Cob

VCB=(--)10V, f=1MHz

(52)40

pF

Continued on next page.

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Ordering number : ENA0463

92706EA MS IM TC-00000207

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that can handle applications that require extremely high levels of reliability, such as life-support systems,

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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

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DATA SHEET

2SA2197 / 2SC6102

PNP / NPN Epitaxial Planar Silicon Transistors

DC / DC Converter Applications