2SC6096 datasheet(2/4 Pages) SANYO

номер детали	2SC6096

подробное описание детали	NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

PDF	4 Pages

Scroll/Zoom	100%

производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6096

No. A0434-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gain-Bandwidth Product

VCE=10V, IC=300mA

300

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=100mA

100

150

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=100mA

0.85

1.2

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0A

120

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100µA, RBE=0Ω

120

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

100

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0A

6.5

Turn-ON Time

ton

See specified Test Circuit.

Storage Time

tstg

See specified Test Circuit.

1100

Fall Time

See specified Test Circuit.

Package Dimensions

Switching Time Test Circuit

unit : mm

7007A-004

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

1.5

0.5

0.4

3.0

4.5

1.6

0.4

1.5

0.75

Top View

Bottom View

VR10

VCC=50V

10IB1= --10IB2=IC=0.5A

VBE= --5V

Ω

INPUT

OUTPUT

100

µF

470

µF

PW=20

µs

IB1

D.C.

≤1%

IB2

2.0

1.6

1.2

0.8

0.4

0.2

1.8

1.4

1.0

0.6

2.0

1.6

1.2

0.4

0.2

0.8

1.8

1.4

0.6

1.0

0.2

0.1

0.4

0.6

0.8

0.3

0.5

0.7

0.9

1.0

IT11115

10mA

20mA

40mA

80mA

IB=0mA

5mA

2mA

VCE=5V

0.2

0.4

0.6

0.8

1.2

1.0

IT11116

60mA

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

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