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2SC6094 датащи(PDF) 2 Page - Sanyo Semicon Device

номер детали 2SC6094
подробное описание детали  NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications
PDF  4 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6094 датащи(HTML) 2 Page - Sanyo Semicon Device

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2SC6094
No. A0410-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
390
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
18
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)1
IC=1A, IB=50mA
90
135
mV
VCE(sat)2
IC=1A, IB=100mA
80
120
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA
0.84
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
60
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6.5
V
Turn-ON Time
ton
See specified Test Circuit.
35
ns
Storage Time
tstg
See specified Test Circuit.
680
ns
Fall Time
tf
See specified Test Circuit.
24
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7007A-004
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
VR10
RB
VCC=30V
10IB1= --10IB2=IC=0.5A
VBE= --5V
++
50
Ω
INPUT
OUTPUT
RL
470
µF
100
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
5.0
3.5
4.5
1.5
2.5
0.5
4.0
2.0
3.0
1.0
0
3.0
1.0
2.0
1.5
2.5
0.5
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT11035
10mA
IB=0mA
2mA
VCE=2V
0
0.2
0.4
0.6
0.8
1.0
1.2
IT11036
5mA
20mA
40mA
60mA
80mA
100mA



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