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2SC6080 датащи(PDF) 2 Page - Sanyo Semicon Device

номер детали 2SC6080
подробное описание детали  NPN Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching
PDF  4 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6080 датащи(HTML) 2 Page - Sanyo Semicon Device

  2SC6080 Datasheet HTML 1Page - Sanyo Semicon Device 2SC6080 Datasheet HTML 2Page - Sanyo Semicon Device 2SC6080 Datasheet HTML 3Page - Sanyo Semicon Device 2SC6080 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC6080
No. A0277-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=5V, IC=1A
180
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
73
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=300mA
200
400
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=6A, IB=300mA
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=100µA, IE=0A
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
60
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=100µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
46
ns
Storage Time
tstg
See specified Test Circuit.
450
ns
Fall Time
tf
See specified Test Circuit.
35
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7508-002
VR
RB
VCC=25V
IC=20IB1= --20IB2=5A
VBE= --5V
+
+
50
Ω
RL
INPUT
OUTPUT
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
10.0
3.2
4.5
2.8
1.6
1.2
0.7
0.75
2.55
2.55
12
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
10
8
6
2
4
9
7
3
5
1
0
0.4
0
0.8
1.2
1.6
2.0
0.2
0.6
1.0
1.4
1.8
IT10549
10mA
15mA
40mA
60mA
80mA
IB=0mA
5mA
20mA
5.0
4.0
3.0
1.0
2.0
4.5
3.5
1.5
2.5
0.5
0
0.2
0
0.4
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
IT10550
10mA
15mA
25mA
IB=0mA
5mA
20mA
30mA
35mA



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