5STP 38Q4200

ABB Semiconductors AG reserves the right to change specifications without notice.

2 of 6

Doc. No. 5SYA1051-01 Sep.00

On-state

Max. average on-state current

4275 A

Max. RMS on-state current

6715 A

Max. peak non-repetitive

60000 A

tp

=

10 ms

125°C

surge current

65000 A

tp

=

8.3 ms

After surge:

I

Limiting load integral

18000 kA

tp

=

10 ms

17500 kA

tp

=

8.3 ms

On-state voltage

1.35 V

=

3000 A

Threshold voltage

0.95 V

=

2500 - 7500 A

125°C

Slope resistance

0.130 m

Ω

Holding current

40-100 mA

= 25°C

20-75 mA

= 125°C

Latching current

100-500 mA

= 25°C

150-350 mA

= 125°C

Switching

Critical rate of rise of on-state

250 A/µs

Cont.

≤ 0.67⋅V

DRM

current

500 A/µs

60 sec.

5000 A f = 50 Hz

=

Delay time

≤

3.0 µs

⋅V

DRM

=

≤

600 µs

≤ 0.67⋅V

DRM

Turn-off time

>

200 V

Recovery charge

min

5000 µAs

-5 A/µs

max

10000 µAs

Triggering

Gate trigger voltage

2.6 V

Gate trigger current

Gate non-trigger voltage

0.3 V

= 0.4

⋅V

DRM

Gate non-trigger current

10 mA

= 0.4

⋅V

DRM

Peak forward gate voltage

12 V

Peak forward gate current

10 A

Peak reverse gate voltage

10 V

Maximum gate power loss

3 W