SML150MAT12

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Document No :

Issue : ENG/06

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IGBT Characteristic Values

Symbol

Name

Conditions

min.

typ.

max.

Unit

Collector Emitter Breakdown Voltage

1200

-

-

V

Gate Threshold Voltage

5.0

5.8

6.5

V

Collector-Emitter Cut-Off Current

-

-

5000

µ

A

Gate-Emitter Leakage Current

-

-

400

nA

Collector-Emitter Saturation Voltage

-

1.75

2.15

V

Input Capacitance

-

10.5

-

µF

Reverse Transfer Capacitance

-

0.4

-

nF

Stray Inductance (module)

f = 1MHz,

-

15

-

nH

Turn On Delay Time

-

0.26

-

µs

Rise Time

-

0.03

-

µs

Turn Off Delay Time

-

0.42

-

µs

Fall Time

-

0.07

-

µs

Turn On Energy Loss

-

16

-

mJ

Turn Off Energy Loss

-

14.5

-

mJ

Inverse Diode Characteristic Values

Symbol

Name

Conditions

min.

typ.

max.

Unit

-

1.65

2.5

Forward Voltage

-

1.65

-

V

Peak Reverse Recovery Current

-

210

-

A

Reverse Recovery Charge

-

30

-

µ

C

Reverse Recovery Energy

-

13.0

-

mJ