HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6317-B

Issued Date : 1992.09.09

Revised Date : 2000.10.01

Page No. : 1/4

HSMC Product Specification

HMPS751

PNP SILICON TRANSISTOR

Description

Amplifier Transistor

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 625 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ....................................................................................... -80 V

VCEO Collector to Emitter Voltage .................................................................................... -60 V

VEBO Emitter to Base Voltage ............................................................................................ -5 V

IC Collector Current ............................................................................................................. -2 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-80

-

-

V

IC=-100uA, IE=0

BVCEO

-60

-

-

V

IC=-10mA, IB=0

BVEBO

-5

-

-

V

IE=-10uA, IE=0

ICBO

-

-

-0.1

uA

VCB=-80V, IE=0

IEBO

-

-

-0.1

uA

VEB=-4V, IC=0

*VCE(sat)1

-

-

-0.5

V

IC=-2A, IB=-200mA

*VCE(sat)2

-

-

-0.3

V

IC=-1A, IB=-100mA

*VBE(sat)

-

-

-1.2

V

IC=-1A, IB=-100mA

VBE(on)

-

-

-1

V

IC=-1A, VCE=-2V

*hFE1

75

-

-

IC=-50mA, VCE=-2V

*hFE2

75

-

-

IC=-500mA, VCE=-2V

*hFE3

75

-

-

IC=-1A, VCE=-2

*hFE4

40

-

-

IC=-2A, VCE=-2V

fT

75

-

-

MHz

VCE=-5V, IC=-50mA, f=100MHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%