2.1

Radiation assurance

Radiation test are guaranteed in compliance with ESCC 22900 and ESCC 5201/002 specifications.

Each lot is tested in radiation according to the following procedure:

•

Radiation condition of 0.1 rad (Si)/s.

•

Test of 11 samples by wafer, 5 biased at 80% of V(BR)CEO, 5 unbiased and for reference.

•

Acceptance criteria in compliance with the post radiation electrical characteristics as per Table 4.

Table 4. ESCC 5201/002 post radiation electrical characteristics (Tamb = 25 °C unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Max

Unit

ICBO

Collector cut-off current (IE = 0)

VCB= 60 V

10

nA

IEBO

Emitter cut-off current (IC= 0)

VEB = 3 V

10

nA

V(BR)CBO

Collector-base breakdown voltage (IE= 0)

IC=100 μA

75

V

V(BR)CEO(1)

Collector-emitter breakdown voltage (IB = 0)

IC = 10 mA

50

V

V(BR)EBO

Emitter-base breakdown voltage (IC= 0)

IE = 100 μA

6

V

VCE(sat)(1)

Collector-emitter saturation voltage

IC=150 mA, IB = 15 mA

0.3

V

VBE(sat)(1)

Base-emitter saturation voltage

IC=150 mA, IB = 15 mA

1.2

V

[hFE](1)

Post irradiation gain calculation (2)

IC= 0.1 mA, VCE= 10 V

[17.5]

IC= 10 mA, VCE= 10 V

[37.5]

IC= 150 mA, VCE= 10 V

[50]

300

IC= 500 mA, VCE= 10 V

[20]

1. Pulsed duration = 300 μs, duty cycle ≥ 2 %

2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation

testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019.

SOC2222AHR

Electrical characteristics

DS14749 - Rev 1

page 4/13