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DDR-GJS-M2 датащи(PDF) 4 Page - DOMINANT Semiconductors |
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DDR-GJS-M2 датащи(HTML) 4 Page - DOMINANT Semiconductors |
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4 / 13 page ![]() 06/09/2005 V4.0 4 Forward Voltage (V) Vf Binning (Optional) Vf Bin @ 20mA 01 02 03 04 1.55 … 1.85 1.85 … 2.15 2.15 … 2.45 2.45 … 2.75 Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Unit Absolute Maximum Ratings Maximum Value DC forward current Peak pulse current; (tp ≤ 10µs, Duty cycle = 0.005) Reverse voltage ESD Thereshold (HBM) LED juction temperature Operating temperature Storage temperature Power dissipation (at room temperature) 30 500 5 2 100 -40 … +100 -40 … +100 75 mA mA V kV ˚C ˚C ˚C mW Gap : DDx-GJS DOMINANT TM Semiconductors Innovating Illumination Typ. (V) Vf @ If = 20mA Forward voltage, Vf is measured with an accuracy of ± 0.1 V. Electrical Characteristics at Ta=25˚C Max. (V) Vr @ Ir = 10µA Min(V) Chip Type GaP 2.2 2.6 5 Please consult sales and marketing for special part number to incorporate Vf bining. |
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