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SS22FA датащи(PDF) 2 Page - ON Semiconductor |
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SS22FA датащи(HTML) 2 Page - ON Semiconductor |
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2 / 6 page ![]() SS22FA − S215FA www.onsemi.com 2 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Parameter Value Unit SS22FA SS23FA SS25FA SS29FA S210FA S215FA VRRM Repetitive Peak Reverse Voltage 20 30 50 90 100 150 V VRMS RMS Reverse Voltage 14 21 35 63 70 105 V VR DC Blocking Voltage 20 30 50 90 100 150 V IF(AV) Average Forward Rectified Current 2 A IFSM Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load 50 A TJ Operating Junction Temperature Range −55 to +125 −55 to +150 °C TSTG Storage Temperature Range −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Note 1) Symbol Characteristic Value Unit ΨJL Junction−to−Lead Thermal Characteristics 16 °C/W RqJA Junction−to−Ambient Thermal Resistance 152 °C/W 1. Per JESD51−3 Recommended Thermal Test Board. Device mounted on FR−4 PCB, board size = 76.2 mm x 114.3 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Value Unit SS22FA SS23FA SS25FA SS29FA S210FA S215FA VF Maximum Instantaneous Forward Voltage (Note 2) IF = 2 A 0.50 0.70 0.85 0.95 V IR Maximum Reverse Current at Rated VR TJ = 25°C 0.4 0.1 mA TJ = 100°C 15 10 TJ = 125°C 5 CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 120 93 62 48 pF Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 10 9 7 13 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle. |
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