GSS4501S

Page: 2/7

ISSUED DATE :2006/04/27

REVISED DATE :

N-Channel Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

12

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

100

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

1

mA

-

-

33

50

m

-

8.2

-

Gate-Source Charge

-

2

-

Gate-Drain (“Miller”) Change

-

4.3

-

nC

-

6

-

Rise Time

-

5.2

-

Turn-off Delay Time

-

18.8

-

Fall Time

-

4.4

-

ns

Input Capacitance

-

645

-

Output Capacitance

-

150

-

Reverse Transfer Capacitance

-

95

-

pF

f=1.0MHz

Source-Drain & Schottky Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

0.5

V

Reverse Recovery Time

-

16

-

ns

Reverse Recovery Charge

-

8

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.