GSMBTA94 datasheet(1/2 Pages) GTM

номер детали	GSMBTA94

подробное описание детали	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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производитель	GTM [GTM CORPORATION]

домашняя страница	http://www.gtm.com.tw

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GSMBTA94

Page: 1/2

ISSUED DATE :2005/08/31

REVISED DATE :

G

G S

S M

M B

B T

TA

A9944

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSMBTA94 is designed for application requires high voltage.

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55~+150

Collector to Base Voltage

VCBO

-400

V

Collector to Emitter Voltage

VCEO

-400

V

Emitter to Base Voltage

VEBO

-6

V

Collector Current

IC

-300

mA

Total Power Dissipation

PD

350

mW

Electrical Characteristics(Ta = 25 : ,unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-400

-

V

IC=-100uA, IE=0

BVCEO

-400

-

V

IC=-1mA, IB=0

BVEBO

-6

-

V

IE=-10uA, IC=0

ICBO

-

-100

nA

VCB=-200V, IE=0

IEBO

-

-100

nA

VEB=-3V, IC=0

*VCE(sat)1

-

-350

mV

IC=-1mA, IB=-0.1mA

*VCE(sat)2

-

-500

mV

IC=-20mA, IB=-2mA

*VCE(sat)3

-

-750

mV

IC=-50mA, IB=-5mA

*VBE(sat)

-

-750

mV

IC=-10mA, IB=-1mA

*hFE1

40

-

VCE=-10V, IC=-1mA

*hFE2

50

-

VCE=-10V, IC=-10mA

*hFE3

45

-

VCE=-10V, IC=-50mA

*hFE4

40

-

VCE=-10V, IC=-100mA

Cob

-

6

pF

VCB=-10V, IE=0, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Аналогичный номер детали - GSMBTA94

производитель	номер детали	датащи	подробное описание детали
E-Tech Electronics LTD	GSMBTA94	192Kb / 2P	P N P E P I T A X I A L P L A N A R T R A N S I S T O R

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